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BLF878, 300 W LDMOS RF power transistor, 470 MHz to 860 MHz

BLF878, 300 W LDMOS RF power transistor, 470 MHz to 860 MHz
-12 %
BLF878, 300 W LDMOS RF power transistor, 470 MHz to 860 MHz

UHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features and benefits

  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • High efficiency
  • Good thermal stability
  • Easy power control
  • Integrated ESD protection
  • Internal input and output matching
  • Advanced flange material for optimum thermal behavior and reliability
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Communication transmitter applications in the UHF band
  • Industrial applications in the UHF band
Attributes
Drain to Source Voltage (Vds) 50 V
Lifecycle Status Obsolete
AMPLIFIER
Gain 22 dB

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220.00€
250.00€
  • Stock: 5
  • Model: BLF878
  • Weight: 0.10kg
  • Dimensions: 50.00mm x 50.00mm x 50.00mm
NXP Semiconductors
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