Brand: NXP Semiconductors
Model: MRFX1K80HR5
Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features
Unmatched input and output allowing wide frequency range utilization
The device can be used single-ended or in a push-pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for the extended power range High..
450.00€
Brand: Freescale Semiconductor
Model: MRFE6VP61K25H
RF Power LDMOS TransistorsTypical Performance: VDD = 50 VoltsFrequency Min:0.0018 GHzFrequency Max:0.6 GHzOutput Power:1250 WGain:22.9 dB% Typ Efficiency:80Supply Voltage:50 VPackage:SOT1787Process:LDMOS..
350.00€
Brand: NXP Semiconductors
Model: MRF1K50HR5
Wideband RF Power LDMOS Transistor, 1500 W CW, 50 VTechnology:SiId - Continuous Drain Current:2.4 AVds - Drain-Source Breakdown Voltage:- 500 mV, 135 VGain:23.7 dBOutput Power:1.5 kWMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:NI-1..
300.00€
Brand: MA-COM
Model: MRF141G
RF MOSFET N-CH 65V 32A 5-Pin Case 375-04Transistor Polarity:N-ChannelTechnology:SiId - Continuous Drain Current:32 AVds - Drain-Source Breakdown Voltage:65 VGain:12 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:375-04P..
340.00€
Brand: MA-COM
Model: MRF171A
RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07Technology:SiId - Continuous Drain Current:4.5 AVds - Drain-Source Breakdown Voltage:65 VGain:17 dBOutput Power:45 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:211-07-3Packaging:TrayConfiguration..
75.00€
Brand: NXP Semiconductors
Model: MRF6V2010NB
RF MOSFET N-CH 110V 3-Pin TO-272 T/R NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50VTypical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
o..
35.00€
Brand: NXP Semiconductors
Model: MRF6V2150NB
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain = 25 dB
Drain Efficiency = 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output PowerFeatures:Character..
50.00€
Brand: NXP Semiconductors
Model: MRF6VP3450HR5
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain 22.5 dB
Drain Efficiency 28%
ACPR @ 4 MHz Offset -62 dBc @ 4 kHz Bandwidth
• Typical Broadb..
230.00€
Showing 1 to 9 of 9 (1 Pages)