BLF888, UHF band from 470 MHz to 860 MHz, 500W LDMOS RF power transistor

Features and benefits

 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:

• • Peak envelope power load power = 500 W
  • Power gain = 19 dB
  • Drain efficiency = 46 %
  • Third order intermodulation distortion = -32 dBc
• DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.3 A:
  • Average output power = 110 W
  • Power gain = 19 dB
  • Drain efficiency = 31 %
  • Shoulder distance = -31 dBc (4.3 MHz from center frequency)
• Integrated ESD protection
• Advanced flange material for optimum thermal behavior and reliability
• Excellent ruggedness
• High power gain
• High efficiency
• Designed for broadband operation (470 MHz to 860 MHz)
• Excellent reliability
• Internal input matching for high gain and optimum broadband operation
• Easy power control
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)