ART1K6FHU, 1-425 MHz 1600 W LDMOS RF power transistor

Features and benefits

• High breakdown voltage enables class E operation at VDS = 48 V
• Suitable for VDS = 50 and 55 V
• Qualified up to a maximum of VDS = 55 V
• Characterized from 30 V to 55 V for extended power range
• Easy power control
• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
• Excellent ruggedness with no device degradation
• High efficiency
• Excellent thermal stability
• Designed for broadband operation
• For RoHS compliance see the product details on the Ampleon website