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Misc. Transistors

Brand: AMPLEON Model: BLP10H610AZ
Frequency Min:0.01 GHzFrequency Max:1.4 GHzOutput Power:10 WGain:22 dB% Typ Efficiency:60Supply Voltage:50 VId:60 mAPackage:SOT1352-1Process:LDMOS..
Brand: AMPLEON Model: BLP05H6110XRY
Frequency Min:0.01 GHzFrequency Max:0.6 GHzOutput Power:110 WGain:27 dB% Typ Efficiency:75Supply Voltage:50 VPackage:SOT1223-2Process:LDMOS..
Brand: Advanced Semiconductor Model: BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Collector- Emitter Voltage VCEO Max:32 VEmitter- Base Voltage VEBO:4 VContinuous Collector Current:4 AMinimum Operating Temperature:- 65 CMaximum Operat..
Brand: Advanced Semiconductor Model: BLV57
Polarity: NPNOutput power: 12 WDissipated power (Ptot): 77 WCollector current (Ic max): 2 ACollector-emitter voltage (Vce max): 27 VSupply voltage: 25 VMounting or package: flangeFrequency bands: UHF..
Brand: NXP Semiconductors Model: BLY87C
Frequency Min:1 GHzFrequency Max:2 GHzOutput Power:8 WGain:12 dBSupply Voltage:13.5 VPackage:StudProcess:BiPolar..
Brand: Motorola Model: TPV596A
Technical FeaturesFrequency Min:0.47 GHzFrequency Max:0.86 GHzOutput Power:0.5 WGain:11.5 dBSupply Voltage:20 VId:220 mAPackage:StudProcess:BiPolar..
Brand: NXP Semiconductors Model: BFQ136,112
NPN 4 GHz wideband transistorSupply Voltage: 18 VFrequency Max: 4 GHzThe material of the Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 9 WMaximum Collector-Base Voltage |Vcb|: 25 VMaximum Collector-Emitter Voltage |Vce|: 18 VMaximum Collector Current |Ic max|: 0.6 AMax. Operat..
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