BLF888AS, 470-860 MHz, 600 W LDMOS RF power transistor

Features and benefits

• Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
• Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
• Suitable for CW UHF and ISM applications
• High power gain
• High efficiency
• Designed for broadband operation (470 MHz to 860 MHz)
• Internal input matching for high gain and optimum broadband operation
• Excellent reliability
• Easy power control
• Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC