Brand: NXP Semiconductors
Model: MRFX1K80HR5
Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features
Unmatched input and output allowing wide frequency range utilization
The device can be used single-ended or in a push-pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for the extended power range High..
450.00€
Brand: NXP Semiconductors
Model: MRF1K50HR5
Wideband RF Power LDMOS Transistor, 1500 W CW, 50 VTechnology:SiId - Continuous Drain Current:2.4 AVds - Drain-Source Breakdown Voltage:- 500 mV, 135 VGain:23.7 dBOutput Power:1.5 kWMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:NI-1..
450.00€
-36 %
Brand: NXP Semiconductors
Model: BLF369
Multi-use VHF power LDMOS transistorGeneral purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.Features and benefitsAdvanced flange material for optimum thermal behavior and reliabilityExcellent ruggednessHigh power gainDesigned for b..
180.00€ 280.00€
Brand: NXP Semiconductors
Model: BLF578XR
Power LDMOS transistorA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without co..
400.00€
-27 %
Brand: NXP Semiconductors
Model: BLF872
RF Mosfet LDMOS 32V 900mA 300W LDMOSTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion IMD3 = −28 dBc
T..
160.00€ 220.00€
-53 %
Brand: NXP Semiconductors
Model: BFQ136,112
NPN 4 GHz wideband transistorSupply Voltage: 18 VFrequency Max: 4 GHzThe material of the Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 9 WMaximum Collector-Base Voltage |Vcb|: 25 VMaximum Collector-Emitter Voltage |Vce|: 18 VMaximum Collector Current |Ic max|: 0.6 AMax. Operat..
70.00€ 150.00€
-12 %
Brand: NXP Semiconductors
Model: BLF878
UHF power LDMOS transistorA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal ..
220.00€ 250.00€
Brand: NXP Semiconductors
Model: MRF6V2010NB
RF MOSFET N-CH 110V 3-Pin TO-272 T/R NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50VTypical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
o..
35.00€
In Stock
Brand: NXP Semiconductors
Model: MRF6V2150NB
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain = 25 dB
Drain Efficiency = 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output PowerFeatures:Char..
50.00€
Brand: NXP Semiconductors
Model: BLF202,115
MOSFET N-CH 40V 1A 8-Pin CDIP SMDVDS drain-source voltage 40 VVGS gate-source voltage ±20 VID drain current (DC) 1 AHigh power gainEasy power controlGold metallizationGood thermal stability
Withstands full load mismatchPtot total power dissipation 5.7 W
Tstg storage temperature150 ..
50.00€
-46 %
Brand: NXP Semiconductors
Model: BLF6G21-10G
RF MOSFET N-CH 65V 3-Pin CDIP SMDW-CDMA performance at frequencies of 2110 MHz and 2170 MHz,Supply voltage of 28 V and an IDq of 100 mA:Efficiency = 31 %ACPR = 39 dBcEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stability No internal matching fo..
35.00€ 65.00€
Brand: NXP Semiconductors
Model: BFG35
BFG35 Series 18 V 1 W 4 GHz SMT NPN Wideband Transistor - SOT-223..
8.00€