Brand: NXP Semiconductors
Model: MRFX1K80HR5
Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features
Unmatched input and output allowing wide frequency range utilization
The device can be used single-ended or in a push-pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for the extended power range High..
450.00€
Brand: NXP Semiconductors
Model: MRF1K50HR5
Wideband RF Power LDMOS Transistor, 1500 W CW, 50 VTechnology:SiId - Continuous Drain Current:2.4 AVds - Drain-Source Breakdown Voltage:- 500 mV, 135 VGain:23.7 dBOutput Power:1.5 kWMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:NI-1..
650.00€
Brand: NXP Semiconductors
Model: BLF369.112
Technical FeaturesFrequency Min:0.005 GHzFrequency Max:0.23 GHzOutput Power:500 WGain:19 dB% Typ Efficiency:55Supply Voltage:32 VId:2 mAPackage:SOT-800-2Process:LDMOS..
250.00€
Brand: NXP Semiconductors
Model: BLF578,112
Technical FeaturesFrequency range : 10~500mhzNom output power : 1000WPower gain(VDS = 50 V; PL = 1000 W) : 26 dBDrain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W) : 75%Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilit..
520.00€
Brand: NXP Semiconductors
Model: BLY87C
Frequency Min:1 GHzFrequency Max:2 GHzOutput Power:8 WGain:12 dBSupply Voltage:13.5 VPackage:StudProcess:BiPolar..
65.00€
Brand: NXP Semiconductors
Model: BLF872,112
Technical FeaturesRF Mosfet LDMOS 32V 900mA 300W LDMOSTTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortio..
300.00€
Brand: NXP Semiconductors
Model: BFQ136,112
NPN 4 GHz wideband transistorSupply Voltage: 18 VFrequency Max: 4 GHzThe material of the Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 9 WMaximum Collector-Base Voltage |Vcb|: 25 VMaximum Collector-Emitter Voltage |Vce|: 18 VMaximum Collector Current |Ic max|: 0.6 AMax. Operat..
76.00€
Brand: NXP Semiconductors
Model: BLF878,112
Technical FeaturesLDMOS, RF, 300W, UHF, 89V, SOT-979A2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:Peak envelop power load power = 300 WPower gain = 21 dBDrain efficiency = 46 %Third-order intermodulation distortion = 35 dBcDVB performan..
300.00€
Brand: NXP Semiconductors
Model: MRF6V2010NB
ZTrans RF MOSFET N-CH 110V 3-Pin TO-272 T/R Description: NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50VTypical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%Capable of handling 10:1..
50.00€
Brand: NXP Semiconductors
Model: MRF6V2150NB
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain = 25 dB
Drain Efficiency = 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output PowerFeatures:Char..
75.00€
Brand: NXP Semiconductors
Model: MRF6VP3450HR5
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain 22.5 dB
Drain Efficiency 28%
ACPR @ 4 MHz Offset -62 dBc @ 4 kHz Bandwidth
• Typical B..
315.00€
Brand: NXP Semiconductors
Model: BLF202,115
Technical FeaturesTrans MOSFET N-CH 40V 1A 8-Pin CDIP SMD T/RHigh power gainEasy power controlGold metallizationGood thermal stability
Withstands full load mismatchVDS drain-source voltage 40 V
VGS gate-source voltage ±20 V
ID drain current (DC) 1 A
Ptot total power dissipation..
50.00€