Brand: NXP Semiconductors
Model: MRFX1K80HR5
Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features
Unmatched input and output allowing wide frequency range utilization
The device can be used single-ended or in a push-pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for the extended power range High..
450.00€
Brand: NXP Semiconductors
Model: MRF1K50HR5
Wideband RF Power LDMOS Transistor, 1500 W CW, 50 VTechnology:SiId - Continuous Drain Current:2.4 AVds - Drain-Source Breakdown Voltage:- 500 mV, 135 VGain:23.7 dBOutput Power:1.5 kWMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:NI-1..
450.00€
-36 %
Brand: NXP Semiconductors
Model: BLF369
Multi-use VHF power LDMOS transistorGeneral purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.Features and benefitsAdvanced flange material for optimum thermal behavior and reliabilityExcellent ruggednessHigh power gainDesigned for b..
180.00€ 280.00€
-27 %
Brand: NXP Semiconductors
Model: BLF872
RF Mosfet LDMOS 32V 900mA 300W LDMOSTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion IMD3 = −28 dBc
T..
160.00€ 220.00€
-53 %
Brand: NXP Semiconductors
Model: BFQ136,112
NPN 4 GHz wideband transistorSupply Voltage: 18 VFrequency Max: 4 GHzThe material of the Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 9 WMaximum Collector-Base Voltage |Vcb|: 25 VMaximum Collector-Emitter Voltage |Vce|: 18 VMaximum Collector Current |Ic max|: 0.6 AMax. Operat..
70.00€ 150.00€
-12 %
Brand: NXP Semiconductors
Model: BLF878
UHF power LDMOS transistorA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal ..
220.00€ 250.00€
Brand: NXP Semiconductors
Model: MRF6V2010NB
RF MOSFET N-CH 110V 3-Pin TO-272 T/R NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50VTypical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
o..
35.00€
In Stock
Brand: NXP Semiconductors
Model: MRF6V2150NB
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain = 25 dB
Drain Efficiency = 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output PowerFeatures:Char..
50.00€
Brand: NXP Semiconductors
Model: BLF202,115
MOSFET N-CH 40V 1A 8-Pin CDIP SMDVDS drain-source voltage 40 VVGS gate-source voltage ±20 VID drain current (DC) 1 AHigh power gainEasy power controlGold metallizationGood thermal stability
Withstands full load mismatchPtot total power dissipation 5.7 W
Tstg storage temperature150 ..
50.00€
-46 %
Brand: NXP Semiconductors
Model: BLF6G21-10G
RF MOSFET N-CH 65V 3-Pin CDIP SMDW-CDMA performance at frequencies of 2110 MHz and 2170 MHz,Supply voltage of 28 V and an IDq of 100 mA:Efficiency = 31 %ACPR = 39 dBcEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stability No internal matching fo..
35.00€ 65.00€
Brand: NXP Semiconductors
Model: BFG35
BFG35 Series 18 V 1 W 4 GHz SMT NPN Wideband Transistor - SOT-223..
8.00€
Brand: NXP Semiconductors
Model: 74HC4353N
Multiplexer Switch ICs TRIPLE 2-CHANNEL MUX/DEMUX/WL..
1.00€