BLF872

RF Mosfet LDMOS 32V 900mA 300W LDMOS

Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:

• Peak envelope power load power PL(PEP) = 300 W
• Gain Gp = 15 dB
• Drain efficiency ηD = 43 %
• Third-order intermodulation distortion IMD3 = −28 dBc
• Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V 
• Drain efficiency ηD = 30 %
•  Third-order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency)
•  Advanced flange material for optimum thermal behavior and reliability
• Excellent ruggedness
• High power gain
• Designed for broadband operation (UHF band)
• Excellent reliability
• Internal input and output matching for high gain and optimum broadband operation
• Source on underside eliminates DC isolators, reducing common-mode inductance
• Easy power control