MRF6V2150NB

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V

Typical CW Performance at 220 MHz:

VDD = 50 Volts,

IDQ = 450 mA,

Pout = 150 Watts

Power Gain = 25 dB

Drain Efficiency = 68.3%

Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power

Features:

• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel