MRF6V2010NB

RF MOSFET N-CH 110V 3-Pin TO-272 T/R 

NXP Semiconductors  Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50V

• Typical CW performance at 220 MHz:
• VDD = 50 Vdc,
• IDQ = 30 mA,
• Pout = 10 W
• Power gain — 23.9 dB
• Drain efficiency — 62%
• Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power

Features

•  Characterized by series equivalent large-signal impedance parameters
•  Qualified up to a maximum of 50 VDD operation
•  Integrated ESD protection
•  225C capable plastic package