Brand: AMPLEON
Model: BLF574,112
Technical Features600W FM LDMOS TransistörTypical CW performance at a frequency of 225 MHz,Supply voltage of 50 V and an IDq of 1000 mA:Average output power = 500 WPower gain = 26.5 dBEfficiency = 70 %Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal sta..
300.00€
Brand: AMPLEON
Model: BLF881,112
Technical FuturesTrans RF MOSFET N-CH 104V 3-Pin LDMOST Bulk2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Peak envelope power load power = 140 WPower gain = 21 dB Drain efficiency = 49 %Third order intermodulation distortion = 34 dBcD..
210.00€
5 Days
Brand: NXP
Model: BLF245
FM MOSFET TRANSISTORFM MOSFET TRANSISTORBRAND: ASIMAX. OUTPUT POWER: 30 WSUPPLY VOLTAGE: 28 V..
120.00€
Brand: AMPLEON
Model: BLF246,112
Technical FeaturesTrans RF MOSFET N-CH 65V 13A 4-Pin CRFM BlisterHigh power gainLow noise figure
Easy power controlGood thermal stability
Withstands full load mismatch.VDS drain-source voltage 65 V
VGS gate-source voltage ±20 V
ID DC drain current 13 A
Ptot total power dissipa..
150.00€
Brand: NXP Semiconductors
Model: BLF369.112
Technical FeaturesFrequency Min:0.005 GHzFrequency Max:0.23 GHzOutput Power:500 WGain:19 dB% Typ Efficiency:55Supply Voltage:32 VId:2 mAPackage:SOT-800-2Process:LDMOS..
250.00€
Brand: AMPLEON
Model: BLP10H610AZ
Frequency Min:0.01 GHzFrequency Max:1.4 GHzOutput Power:10 WGain:22 dB% Typ Efficiency:60Supply Voltage:50 VId:60 mAPackage:SOT1352-1Process:LDMOS..
35.00€
Brand: AMPLEON
Model: BLF573S,112
Technical FeaturesTrans MOSFET N-CH 110V 42A 3-Pin LDMOST BlisterTypical CW performance at a frequency of 225 MHz, Supply voltage of 50 V and an
IDq of 900 mA:Average output power = 300 W Power gain = 27.2 dB
Efficiency = 70 %
Easy power control Integrated ESD protectionExcellent rug..
200.00€
Brand: NXP Semiconductors
Model: BLF578,112
Technical FeaturesFrequency range : 10~500mhzNom output power : 1000WPower gain(VDS = 50 V; PL = 1000 W) : 26 dBDrain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W) : 75%Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilit..
520.00€
Brand: AMPLEON
Model: BLP05H6110XRY
Frequency Min:0.01 GHzFrequency Max:0.6 GHzOutput Power:110 WGain:27 dB% Typ Efficiency:75Supply Voltage:50 VPackage:SOT1223-2Process:LDMOS..
60.00€
Brand: Advanced Semiconductor
Model: BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Collector- Emitter Voltage VCEO Max:32 VEmitter- Base Voltage VEBO:4 VContinuous Collector Current:4 AMinimum Operating Temperature:- 65 CMaximum Operat..
120.00€
Brand: Advanced Semiconductor
Model: BLV57
Polarity: NPNOutput power: 12 WDissipated power (Ptot): 77 WCollector current (Ic max): 2 ACollector-emitter voltage (Vce max): 27 VSupply voltage: 25 VMounting or package: flangeFrequency bands: UHF..
230.00€