Brand: Advanced Semiconductor
Model: BLW98
Technical Features: Frequency Min:0.47 GHzFrequency Max:0.86 GHzOutput Power:3.5 WGain:6.5 dBSupply Voltage:25 VId:850 mAPackage:StudProcess:BiPolar..
100.00€
Brand: AMPLEON
Model: BLF647PS,112
Technical FeaturesTrans MOSFET N-CH 65V 5-Pin SOT-1121B BulkEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilityDesigned for broadband operation (HF to 600 MHz)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)..
330.00€
Brand: NXP Semiconductors
Model: BLY87C
Frequency Min:1 GHzFrequency Max:2 GHzOutput Power:8 WGain:12 dBSupply Voltage:13.5 VPackage:StudProcess:BiPolar..
65.00€
Brand: Advanced Semiconductor
Model: BLF861A
RF Mosfet LDMOS (Dual), Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTProduct DetailsRF Mosfet LDMOS (Dual),Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTID 18 AVDS 65 VVGS ±15 VPDISS 318 W @ TC = 25 °CTJ -65 °C to +200 °CTSTG -65 °C to +150 °CθJC 0.55 °C/W..
230.00€
Brand: STMicroelectronics
Model: SD56120M
Trans RF MOSFET N-CH 65V 14A 5-Pin Case M-252 Tube..
220.00€
Brand: NXP Semiconductors
Model: BLF872,112
Technical FeaturesRF Mosfet LDMOS 32V 900mA 300W LDMOSTTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortio..
300.00€
Brand: MA-COM
Model: MRF141G
Trans RF MOSFET N-CH 65V 32A 5-Pin Case 375-04Transistor Polarity:N-ChannelTechnology:SiId - Continuous Drain Current:32 AVds - Drain-Source Breakdown Voltage:65 VGain:12 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:3..
445.00€
Brand: MA-COM
Model: MRF171A
Trans RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07Technology:SiId - Continuous Drain Current:4.5 AVds - Drain-Source Breakdown Voltage:65 VGain:17 dBOutput Power:45 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:211-07-3Packaging:TrayConfigu..
85.00€
Brand: NXP Semiconductors
Model: BLF878,112
Technical FeaturesLDMOS, RF, 300W, UHF, 89V, SOT-979A2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:Peak envelop power load power = 300 WPower gain = 21 dBDrain efficiency = 46 %Third-order intermodulation distortion = 35 dBcDVB performan..
300.00€
Brand: NXP Semiconductors
Model: MRF6V2010NB
ZTrans RF MOSFET N-CH 110V 3-Pin TO-272 T/R Description: NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50VTypical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%Capable of handling 10:1..
50.00€
Brand: NXP Semiconductors
Model: MRF6V2150NB
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain = 25 dB
Drain Efficiency = 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output PowerFeatures:Char..
75.00€
Brand: AMPLEON
Model: BLF898U
Technical FuturesDesigned for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Ha..
390.00€