-50 %
Brand: NXP Semiconductors
Model: BLY87C
Frequency Min:1 GHzFrequency Max:2 GHzOutput Power:8 WGain:12 dBSupply Voltage:13.5 VPackage:StudProcess:BiPolar..
40.00€ 80.00€
-28 %
Brand: Advanced Semiconductor
Model: BLF861A
RF Mosfet LDMOS (Dual), Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTProduct DetailsRF Mosfet LDMOS (Dual),Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTID 18 AVDS 65 VVGS ±15 VPDISS 318 W @ TC = 25 °CTJ -65 °C to +200 °CTSTG -65 °C to +150 °CθJC 0.55 °C/W..
180.00€ 250.00€
-44 %
-27 %
Brand: NXP Semiconductors
Model: BLF872,112
RF Mosfet LDMOS 32V 900mA 300W LDMOSTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion IMD3 = −28 dBc
Typ..
160.00€ 220.00€
-41 %
Brand: MA-COM
Model: MRF141G
RF MOSFET N-CH 65V 32A 5-Pin Case 375-04Transistor Polarity:N-ChannelTechnology:SiId - Continuous Drain Current:32 AVds - Drain-Source Breakdown Voltage:65 VGain:12 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:375-04P..
200.00€ 340.00€
Brand: MA-COM
Model: MRF171A
RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07Technology:SiId - Continuous Drain Current:4.5 AVds - Drain-Source Breakdown Voltage:65 VGain:17 dBOutput Power:45 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:211-07-3Packaging:TrayConfiguration..
75.00€
-37 %
Brand: NXP Semiconductors
Model: BLF878,112
LDMOS, RF, 300W, UHF, 89V, SOT-979A2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:Peak envelop power load power = 300 WPower gain = 21 dBDrain efficiency = 46 %Third-order intermodulation distortion = 35 dBcDVB performance at 858 MHz, a dr..
220.00€ 350.00€
Brand: NXP Semiconductors
Model: MRF6V2010NB
RF MOSFET N-CH 110V 3-Pin TO-272 T/R NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50VTypical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
o..
35.00€
Brand: NXP Semiconductors
Model: MRF6V2150NB
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain = 25 dB
Drain Efficiency = 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output PowerFeatures:Character..
50.00€
-50 %
Brand: AMPLEON
Model: BLF898
Designed for symmetric and asymmetric Doherty operationVDS drain-source voltage 120 VVGS gate-source voltage +11 VHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Rest..
200.00€ 400.00€
-35 %
Brand: NXP Semiconductors
Model: MRF6VP3450HR5
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain 22.5 dB
Drain Efficiency 28%
ACPR @ 4 MHz Offset -62 dBc @ 4 kHz Bandwidth
• Typical Broadb..
150.00€ 230.00€
-46 %
Brand: AMPLEON
Model: BLF898S
Designed for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)..
200.00€ 370.00€