-44 %
-27 %
Brand: NXP Semiconductors
Model: BLF872
RF Mosfet LDMOS 32V 900mA 300W LDMOSTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion IMD3 = −28 dBc
T..
160.00€ 220.00€
-10 %
Brand: MA-COM
Model: MRF141G
RF MOSFET N-CH 65V 32A 5-Pin Case 375-04Transistor Polarity:N-ChannelTechnology:SiId - Continuous Drain Current:32 AVds - Drain-Source Breakdown Voltage:65 VGain:12 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:375-04P..
270.00€ 300.00€
In Stock
Brand: MA-COM
Model: MRF171A
RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07Technology:SiId - Continuous Drain Current:4.5 AVds - Drain-Source Breakdown Voltage:65 VGain:17 dBOutput Power:45 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:211-07-3Packaging:TrayConfiguration..
75.00€
-12 %
Brand: NXP Semiconductors
Model: BLF878
UHF power LDMOS transistorA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal ..
220.00€ 250.00€
Brand: NXP Semiconductors
Model: MRF6V2010NB
RF MOSFET N-CH 110V 3-Pin TO-272 T/R NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50VTypical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
o..
35.00€
In Stock
Brand: NXP Semiconductors
Model: MRF6V2150NB
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain = 25 dB
Drain Efficiency = 68.3%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output PowerFeatures:Char..
50.00€
-17 %
Brand: AMPLEON
Model: BLF898
UHF power LDMOS transistorA 900 W LDMOS RF power transistor for broadcast Doherty and class AB transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Features and benefitsDesigned for symmetric and asymmetric Doherty..
250.00€ 300.00€
-22 %
Brand: Freescale Semiconductor
Model: MRF6VP3450HR5
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain 22.5 dB
Drain Efficiency 28%
ACPR @ 4 MHz Offset -62 dBc @ 4 kHz Bandwidth
• Typical B..
180.00€ 230.00€
Brand: NXP Semiconductors
Model: BLF202,115
MOSFET N-CH 40V 1A 8-Pin CDIP SMDVDS drain-source voltage 40 VVGS gate-source voltage ±20 VID drain current (DC) 1 AHigh power gainEasy power controlGold metallizationGood thermal stability
Withstands full load mismatchPtot total power dissipation 5.7 W
Tstg storage temperature150 ..
50.00€
-46 %
Brand: NXP Semiconductors
Model: BLF6G21-10G
RF MOSFET N-CH 65V 3-Pin CDIP SMDW-CDMA performance at frequencies of 2110 MHz and 2170 MHz,Supply voltage of 28 V and an IDq of 100 mA:Efficiency = 31 %ACPR = 39 dBcEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stability No internal matching fo..
35.00€ 65.00€