BLF246

Technical Features

Trans RF MOSFET N-CH 65V 13A 4-Pin CRFM Blister

• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
• VDS drain-source voltage  65 V
• VGS gate-source voltage  ±20 V
• ID DC drain current  13 A
• Ptot total power dissipation 130 W
• Tstg storage temperature+150 °C
• Tj junction temperature  200 °C