Brand: NXP Semiconductors
Model: MRF6VP3450HR5
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain 22.5 dB
Drain Efficiency 28%
ACPR @ 4 MHz Offset -62 dBc @ 4 kHz Bandwidth
• Typical B..
315.00€
Brand: AMPLEON
Model: BLF898SU
Technical FuturesDesigned for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Ha..
450.00€
Brand: NXP Semiconductors
Model: BLF202,115
Technical FeaturesTrans MOSFET N-CH 40V 1A 8-Pin CDIP SMD T/RHigh power gainEasy power controlGold metallizationGood thermal stability
Withstands full load mismatchVDS drain-source voltage 40 V
VGS gate-source voltage ±20 V
ID drain current (DC) 1 A
Ptot total power dissipation..
50.00€
Brand: NXP Semiconductors
Model: BLF6G21-10G
Technical FeaturesTransistor RF MOSFET N-CH 65V 3-Pin CDIP SMD T/RW-CDMA performance at frequencies of 2110 MHz and 2170 MHz,Supply voltage of 28 V and an IDq of 100 mA:Efficiency = 31 %ACPR = 39 dBcEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabi..
50.00€
Brand: AMPLEON
Model: BLF147,112
Technical FeaturesTransistor MOSFET N-CH 65V 25A 4-Pin SOT-121B BulkHigh power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.VDS drain-source voltage 65V
VGS gate-source voltage ±20 V
ID drain current (DC) 25 A
Ptot tot..
150.00€
Brand: Central Semiconductor
Model: 2N1711
Bipolar Transistor NPN Amplifier/Switch 500mA 50V 3-Pin TO-39 Through Hole BoxTransistor Polarity:NPNConfiguration:SingleCollector- Emitter Voltage VCEO Max:50 VCollector- Base Voltage VCBO:75 VEmitter- Base Voltage VEBO:7 VCollector-Emitter Saturation Voltage:1 VMaximum DC Collector Current:0.5 APd..
5.00€
Brand: Central Semiconductor
Model: 2N4427
Bipolar Transistor NPN RF Oscillator 400mA 20V 3-Pin TO-39 Through Hole BoxTransistor Polarity:NPNConfiguration:SingleCollector- Emitter Voltage VCEO Max:20 VCollector- Base Voltage VCBO:40 VEmitter- Base Voltage VEBO:2 VCollector-Emitter Saturation Voltage:0.5 VMaximum DC Collector Current:0.4 APd ..
5.00€