MRFX1K80HR5

Ldmos Transistor, Rf, 193V, Ni-1230H-4S 

Features

• Unmatched input and output allowing wide frequency range utilization
• The device can be used single-ended or in a push-pull configuration
• Qualified up to a maximum of 65 VDD operation
• Characterized from 30 to 65 V for the extended power range
• High breakdown voltage for enhanced reliability
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Lower thermal resistance option in the over-molded plastic package: MRFX1K80N
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch