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MRF6V2010NB
RF MOSFET N-CH 110V 3-Pin TO-272 T/R
NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50V
- Typical CW performance at 220 MHz:
- VDD = 50 Vdc,
- IDQ = 30 mA,
- Pout = 10 W
- Power gain — 23.9 dB
- Drain efficiency — 62%
- Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power
Features
- Characterized by series equivalent large-signal impedance parameters
- Qualified up to a maximum of 50 VDD operation
- Integrated ESD protection
- 225C capable plastic package
Attributes | |
Lifecycle Status | Obsolete |
35.00€
- Stock: 2
- Model: MRF6V2010NB
- Weight: 0.10kg
- Dimensions: 50.00mm x 50.00mm x 50.00mm
Tags:
MRF6V2010