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MRF6V2010NB

MRF6V2010NB
MRF6V2010NB

RF MOSFET N-CH 110V 3-Pin TO-272 T/R 

NXP Semiconductors  Lateral N-Channel Broadband RF Power 10-450 MHz, 10 W, 50V

  • Typical CW performance at 220 MHz:
  • VDD = 50 Vdc,
  • IDQ = 30 mA,
  • Pout = 10 W
  • Power gain — 23.9 dB
  • Drain efficiency — 62%
  • Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power

Features

  •  Characterized by series equivalent large-signal impedance parameters
  •  Qualified up to a maximum of 50 VDD operation
  •  Integrated ESD protection
  •  225C capable plastic package 

Attributes
Lifecycle Status Obsolete

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35.00€
  • Stock: 2
  • Model: MRF6V2010NB
  • Weight: 0.10kg
  • Dimensions: 50.00mm x 50.00mm x 50.00mm
Tags: MRF6V2010