MRF1K50H
650.00€
- Stock: 1
- Model: MRF1K50HR5
- Weight: 0.10kg
- Dimensions: 50.00mm x 50.00mm x 50.00mm
MRF1K50H
20 Days
It is designed to use in FM transmitters and amplifiers. RF power transistors are MRF1K50H very rugged LDMOS.A low pass filter with on board direction..
2,010.00€
It is designed to use in FM transmitters and amplifiers. RF power transistors are MRF1K50H very rugged LDMOS.A low pass filter with on board direction..
3,150.00€
It is designed to use in FM transmitters and amplifiers. RF power transistor is MRF1K50H very rugged LDMOS.A low pass filter with on board directional..
1,100.00€
It is designed to use in FM transmitters and amplifiers. RF power transistor is MRF1K50H very rugged LDMOS.A driver and low pass filter with on board ..
1,250.00€
It is designed to use in FM transmitters and amplifiers. RF power transistor is MRF1K50H very rugged LDMOS.A low pass filter with on board directional..
790.00€
It is designed to use in FM transmitters and amplifiers. RF power transistor is MRF1K50H very rugged LDMOS.A driver and low pass filter with on board ..
1,350.00€
It is designed to use in FM transmitters and amplifiers. RF power transistors are MRF1K50H very rugged LDMOS.A driver and low pass filter with on boar..
2,840.00€
It is designed to use in FM transmitters and amplifiers. RF power transistors are MRF1K50H very rugged LDMOS.A low pass filter with on board direction..
2,020.00€
It is designed to use in FM transmitters and amplifiers. RF power transistors are MRF1K50H very rugged LDMOS.A driver and low pass filter with on boar..
2,260.00€
Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features
Unmatched input and output allowing wide frequency range utilization
The device can be used sing..
450.00€
RF Power LDMOS TransistorsTypical Performance: VDD = 50 VoltsFrequency Min:0.0018 GHzFrequency Max:0.6 GHzOutput Power:1250 WGain:22.9 dB% Typ Efficie..
450.00€
ZTrans RF MOSFET N-CH 110V 3-Pin TO-272 T/R Description: NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 ..
50.00€
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pou..
75.00€
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watt..
315.00€