It is designed to use in FM transmitters and amplifiers. RF power transistor is BLP05H6110XR very rugged LDMOS.A driver and low pass filter with on bo..
It is designed to use in FM transmitters and amplifiers. RF power transistor is BLP05H6110XR very rugged LDMOS.A low pass filter with on board directi..
It is designed to use in FM transmitters and amplifiers. RF power transistor is BLP05H6110XR very rugged LDMOS.A low pass filter with on board directi..
It is designed to use in FM transmitters and amplifiers. RF power transistor is BLP05H6110XR very rugged LDMOS.A driver and low pass filter with on bo..
NPN 4 GHz wideband transistorSupply Voltage: 18 VFrequency Max: 4 GHzThe material of the Transistor: SiPolarity: NPNMaximum Collector Power Dissipatio..
Single N-Channel 60 V 1.6 Ohm 1.3 nC 350mW Silicon Surface Mount Mosfet - SOT-23Technology:SiMounting Style:SMD/SMTPackage/Case:SOT-23-3Number of Chan..
Maximum Collector Power Dissipation (Pc): 10 WMaximum Collector-Base Voltage |Vcb|: 50 VMaximum Collector Current |Ic max|: 12 AMax. Operating Junctio..