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BLF246, RF Mosfet Transistor, 80W in 25-175 MHz band

BLF246, RF Mosfet Transistor, 80W in 25-175 MHz band
-39 %
BLF246, RF Mosfet Transistor, 80W in 25-175 MHz band

VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. It gives 80W in 25-175 MHz band.

Features and benefits

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch

Applications

  • Large signal amplifier applications in the VHF frequency range
Attributes
Drain to Source Voltage (Vds) 24 V
AMPLIFIER
Gain 13 dB

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110.00€
180.00€
  • Stock: 2
  • Model: BLF246
  • Weight: 0.10kg
  • Dimensions: 50.00mm x 50.00mm x 50.00mm
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