BLF881, LDMOS, 50V

Technical Futures

Trans RF MOSFET N-CH 104V 3-Pin LDMOST Bulk

• 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
• Peak envelope power load power = 140 W
• Power gain = 21 dB
• Drain efficiency = 49 %
• Third order intermodulation distortion = 34 dBc
• DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
• Average output power = 33 W
• Power gain = 21 dB
• Drain efficiency = 34 %
• Shoulder distance = 33 dBc (4.3 MHz from center frequency)
• Integrated ESD protection
• Excellent ruggedness
• High power gain