MRF6V2300NB
Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features
Unmatched input and output allowing wide frequency range utilization
The device can be used sing..
450.00€
RF Power LDMOS TransistorsTypical Performance: VDD = 50 VoltsFrequency Min:0.0018 GHzFrequency Max:0.6 GHzOutput Power:1250 WGain:22.9 dB% Typ Efficie..
450.00€
ZTrans RF MOSFET N-CH 110V 3-Pin TO-272 T/R Description: NXP Semiconductors Lateral N-Channel Broadband RF Power 10-450 MHz, 10 ..
50.00€
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 VTypical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pou..
75.00€
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watt..
315.00€