BFQ136

NPN 4 GHz wideband transistor

• Supply Voltage: 18 V
• Frequency Max: 4 GHz
• The material of the Transistor: Si
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 9 W
• Maximum Collector-Base Voltage |Vcb|: 25 V
• Maximum Collector-Emitter Voltage |Vce|: 18 V
• Maximum Collector Current |Ic max|: 0.6 A
• Max. Operating Junction Temperature (Tj): 150 °C
• Transition Frequency (ft): 4000 MHz
• Forward Current Transfer Ratio (hFE), MIN: 25
• Noise Figure, dB: -
• Package: TO128