Brand: AMPLEON
Model: BLF881,112
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Peak envelope power load power = 140 WPower gain = 21 dB Drain efficiency = 49 %Third order intermodulation distortion = 34 dBcDVB performance at 858 MHz, a drain-source voltage VDS of 50 V ..
125.00€
-39 %
Brand: AMPLEON
Model: BLF246,112
VDS drain-source voltage 65 VVGS gate-source voltage ±20 VID DC drain current 13 AHigh power gainLow noise figure
Easy power controlGood thermal stability
Withstands full load mismatch.Ptot total power dissipation 130 WTstg storage temperature+150 °CTj junction temperature 20..
110.00€ 180.00€
-36 %
Brand: NXP Semiconductors
Model: BLF369.112
Frequency Min:5 MHzFrequency Max:230 MHzOutput Power:500 WGain:19 dB% Typ Efficiency:55Supply Voltage:32 VId:2 mAPackage:SOT-800-2Process:LDMOS..
180.00€ 280.00€
Brand: AMPLEON
Model: BLP10H610AZ
Frequency Min:0.01 GHzFrequency Max:1.4 GHzOutput Power:10 WGain:22 dB% Typ Efficiency:60Supply Voltage:50 VId:60 mAPackage:SOT1352-1Process:LDMOS..
35.00€
-35 %
Brand: AMPLEON
Model: BLF573S,112
Typical CW performance at a frequency of 225 MHz, Supply voltage of 50 V and an
IDq of 900 mA:Average output power = 300 W Power gain = 27.2 dB
Efficiency = 70 %
Easy power control Integrated ESD protectionExcellent ruggedness
High efficiency
Excellent thermal stability
Designed fo..
110.00€ 170.00€
Brand: NXP Semiconductors
Model: BLF578XR
Frequency range : 10~500MHzNom output power : 1000WPower gain(VDS = 50 V; PL = 1000 W) : 26 dBDrain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W) : 75%Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilityDesigned for broa..
400.00€
Brand: AMPLEON
Model: BLP05H6110XRY
Frequency Min:0.01 GHzFrequency Max:0.6 GHzOutput Power:110 WGain:27 dB% Typ Efficiency:75Supply Voltage:50 VPackage:SOT1223-2Process:LDMOS..
60.00€
-50 %
Brand: Advanced Semiconductor
Model: BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Collector- Emitter Voltage VCEO Max:32 VEmitter- Base Voltage VEBO:4 VContinuous Collector Current:4 AMinimum Operating Temperature:- 65 CMaximum Operat..
50.00€ 100.00€
-53 %
Brand: Advanced Semiconductor
Model: BLV57
Polarity: NPNOutput power: 12 WDissipated power (Ptot): 77 WCollector current (Ic max): 2 ACollector-emitter voltage (Vce max): 27 VSupply voltage: 25 VMounting or package: flangeFrequency bands: UHF..
80.00€ 170.00€
-38 %
Brand: Advanced Semiconductor
Model: BLW98
Frequency Min:470 MHzFrequency Max:860 MHzOutput Power:3.5 WGain:6.5 dBSupply Voltage:25 VId:850 mAPackage:StudProcess:BiPolar..
50.00€ 80.00€
-33 %
Brand: AMPLEON
Model: BLF647PS,112
Designed for broadband operation (HF to 600 MHz)VDS drain-source voltage 135 VVGS gate-source voltage +11 VHigh efficiencyEasy power controlIntegrated ESD protectionExcellent ruggednessExcellent thermal stabilityCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (..
140.00€ 210.00€