Brand: AMPLEON
Model: BLF881
UHF power LDMOS transistorA 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.Fea..
125.00€
-39 %
Brand: AMPLEON
Model: BLF246
VHF power MOS transistorSilicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. It gives 80W in 25-175 MHz band.Features and benefitsHigh power gainLow noise figureEasy power controlGoo..
110.00€ 180.00€
-36 %
Brand: NXP Semiconductors
Model: BLF369
Multi-use VHF power LDMOS transistorGeneral purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.Features and benefitsAdvanced flange material for optimum thermal behavior and reliabilityExcellent ruggednessHigh power gainDesigned for b..
180.00€ 280.00€
Brand: AMPLEON
Model: BLP10H610AZ
Frequency Min:0.01 GHzFrequency Max:1.4 GHzOutput Power:10 WGain:22 dB% Typ Efficiency:60Supply Voltage:50 VId:60 mAPackage:SOT1352-1Process:LDMOS..
35.00€
-12 %
Brand: AMPLEON
Model: BLF573S
HF / VHF power LDMOS transistorA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.Features and benefitsEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilityDesi..
150.00€ 170.00€
Brand: AMPLEON
Model: BLF578XR
Power LDMOS transistorA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without co..
400.00€
Brand: AMPLEON
Model: BLP05H6110XRY
Frequency Min:0.01 GHzFrequency Max:0.6 GHzOutput Power:110 WGain:27 dB% Typ Efficiency:75Supply Voltage:50 VPackage:SOT1223-2Process:LDMOS..
60.00€
-50 %
Brand: Advanced Semiconductor
Model: BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Collector- Emitter Voltage VCEO Max:32 VEmitter- Base Voltage VEBO:4 VContinuous Collector Current:4 AMinimum Operating Temperature:- 65 CMaximum Operat..
50.00€ 100.00€
-63 %
Brand: Advanced Semiconductor
Model: BLV57
Polarity: NPNOutput power: 12 WDissipated power (Ptot): 77 WCollector current (Ic max): 2 ACollector-emitter voltage (Vce max): 27 VSupply voltage: 25 VMounting or package: flangeFrequency bands: UHF..
45.00€ 120.00€
-38 %
Brand: Advanced Semiconductor
Model: BLW98
Frequency Min:470 MHzFrequency Max:860 MHzOutput Power:3.5 WGain:6.5 dBSupply Voltage:25 VId:850 mAPackage:StudProcess:BiPolar..
50.00€ 80.00€
-33 %
Brand: AMPLEON
Model: BLF647
UHF power LDMOS transistorSilicon N-channel enhancement mode lateral D-MOS 150W push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.Features and benefitsHigh power gainEasy power controlExcellent ruggednessSource on underside eliminates D..
140.00€ 210.00€
