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BLF888AS

BLF888AS
BLF888AS

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260.00€
  • Stock: 4
  • Model: BLF888AS
NXP
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BLV859
BLV859
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150.00€
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ART1K6FHU
ART1K6FHU
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350.00€
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BLF888
BLF888
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260.00€
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BLF888A NXP RF TRANSİSTÖR
BLF888A NXP RF TRANSİSTÖR
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300.00€
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BLV33F
BLV33F
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110.00€
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MRFE6VP61K25H
MRFE6VP61K25H
RF Power LDMOS TransistorsTypical Performance: VDD = 50 VoltsFrequency Min:0.0018 GHzFrequency Max:0.6 GHzOutput Power:1250 WGain:22.9 dB% Typ Efficie..
350.00€
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BLF188XR
BLF188XR
LDMOS N-CH 135V 4-Pin SOT-539A BoxVDS drain-source voltage  135 VVGS gate-source voltage +11 VEasy power controlIntegrated ESD protectionExcellen..
280.00€
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BLF183XRU
BLF183XRU
Transistor MOSFET N-CH 135V 5-Pin SOT-1121AVDS drain-source voltage 135 VVGS gate-source voltage +11 VEasy power controlIntegrated ESD protectionExcel..
180.00€
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SD2932
SD2932
MOSFET N-CH 125V 40A 4-Pin (4+Tab) Case M-244Technology:SiId - Continuous Drain Current:40 AVds - Drain-Source Breakdown Voltage:125 VGain:15 dBOutput..
280.00€
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BLF571
BLF571
BLF571 Series 255 MHz, 20W, 50V HF/ VHF Power LDMOS Transistor - SOT-467CTypical CW performance at frequency of 225 MHz,Supply voltage of 50 V and an ..
200.00€
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BLF574
BLF574
600W FM LDMOS TransistorTypical CW performance at a frequency of 225 MHz,Supply voltage of 50 V and an IDq of 1000 mA:Average output power = 500 WPowe..
220.00€
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BLF881
BLF881
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 WPow..
125.00€
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BLF244
BLF244
Frequency Min:     5 MHzFrequency Max175 MHzOutput Power:15 WGain:13 dB% Typ Efficiency:50Supply Voltage:28 VId:25 mAPackage:SOT-123APr..
175.00€
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BLF246
BLF246
VDS drain-source voltage  65 VVGS gate-source voltage  ±20 VID DC drain current  13 AHigh power gainLow noise figure Easy power control..
180.00€
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BLF369
BLF369
Frequency Min:5 MHzFrequency Max:230 MHzOutput Power:500 WGain:19 dB% Typ Efficiency:55Supply Voltage:32 VId:2 mAPackage:SOT-800-2Process:LDMOS..
220.00€
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BLP10H610AZ
BLP10H610AZ
Frequency Min:0.01 GHzFrequency Max:1.4 GHzOutput Power:10 WGain:22 dB% Typ Efficiency:60Supply Voltage:50 VId:60 mAPackage:SOT1352-1Process:LDMOS..
35.00€
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BLF573S
BLF573S
Typical CW performance at a frequency of 225 MHz, Supply voltage of 50 V and an IDq of 900 mA:Average output power = 300 W Power gain = 27.2..
170.00€
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BLF578
BLF578
Frequency range : 10~500MHzNom output power : 1000WPower gain(VDS = 50 V; PL = 1000 W) : 26 dBDrain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; P..
400.00€
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BLP05H6110XRY
BLP05H6110XRY
Frequency Min:0.01 GHzFrequency Max:0.6 GHzOutput Power:110 WGain:27 dB% Typ Efficiency:75Supply Voltage:50 VPackage:SOT1223-2Process:LDMOS..
60.00€
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BLV32F
BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Co..
100.00€
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