-41 %
Brand: MA-COM
Model: MRF141G
RF MOSFET N-CH 65V 32A 5-Pin Case 375-04Transistor Polarity:N-ChannelTechnology:SiId - Continuous Drain Current:32 AVds - Drain-Source Breakdown Voltage:65 VGain:12 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:375-04P..
200.00€ 340.00€
-53 %
Brand: NXP Semiconductors
Model: BFQ136,112
NPN 4 GHz wideband transistorSupply Voltage: 18 VFrequency Max: 4 GHzThe material of the Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 9 WMaximum Collector-Base Voltage |Vcb|: 25 VMaximum Collector-Emitter Voltage |Vce|: 18 VMaximum Collector Current |Ic max|: 0.6 AMax. Operat..
70.00€ 150.00€
-37 %
Brand: NXP Semiconductors
Model: BLF878,112
LDMOS, RF, 300W, UHF, 89V, SOT-979A2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:Peak envelop power load power = 300 WPower gain = 21 dBDrain efficiency = 46 %Third-order intermodulation distortion = 35 dBcDVB performance at 858 MHz, a dr..
220.00€ 350.00€
-50 %
Brand: AMPLEON
Model: BLF898
Designed for symmetric and asymmetric Doherty operationVDS drain-source voltage 120 VVGS gate-source voltage +11 VHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Rest..
200.00€ 400.00€
-35 %
Brand: NXP Semiconductors
Model: MRF6VP3450HR5
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain 22.5 dB
Drain Efficiency 28%
ACPR @ 4 MHz Offset -62 dBc @ 4 kHz Bandwidth
• Typical Broadb..
150.00€ 230.00€
-46 %
Brand: AMPLEON
Model: BLF898S
Designed for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)..
200.00€ 370.00€
-46 %
Brand: NXP Semiconductors
Model: BLF6G21-10G
RF MOSFET N-CH 65V 3-Pin CDIP SMDW-CDMA performance at frequencies of 2110 MHz and 2170 MHz,Supply voltage of 28 V and an IDq of 100 mA:Efficiency = 31 %ACPR = 39 dBcEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stability No internal matching fo..
35.00€ 65.00€
-32 %
Brand: AMPLEON
Model: BLF147,112
MOSFET N-CH 65V 25A 4-Pin SOT-121BVDS drain-source voltage 65V VGS gate-source voltage ±20 VID drain current (DC) 25 AHigh power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.Ptot total power dissipation 220 WTstg ..
125.00€ 185.00€
-31 %
Brand: ONAIR
Model: UHF PANEL (4 DIPOLE)
Technical FeaturesMax.Input Power N Connector: 500 W 7/16 Connector: 1.2 kW 7/8 Connector: 2 KWFrequency Band: 470-860MHz Band IV-V UHF TV (no tune wideband)Impedance: 50 OhmV.S.W.R.: < 1.1 : 1Form factor: Panel antenna with radomeGain: 12dBdPolarization: HorizontalInstallation equipment and stai..
275.00€ 400.00€
-24 %
Brand: ONAIR
Model: LOG/G
850-1020 MHz, broadband gain 12 dBd. Logarithmic. Aluminium, N connector. Max. power 300 W..
160.00€ 210.00€