-33 %
Brand: ROHDE & SCHWARZ
Model: BN10913
Technical Features :Manufacturer / Brand: Rohde & Schwarz, PTE; MünchenCategory: Service- or Lab Equipment Power type and voltage: Alternating Current supply (AC) / 110-240 VoltLoudspeaker: - - No sound reproduction output.Material: Metal caseShape: Table model, low profile (big size).Dimensions..
100.00€ 150.00€
-39 %
Brand: AMPLEON
Model: BLF246
VHF power MOS transistorSilicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. It gives 80W in 25-175 MHz band.Features and benefitsHigh power gainLow noise figureEasy power controlGoo..
110.00€ 180.00€
-36 %
Brand: NXP Semiconductors
Model: BLF369
Multi-use VHF power LDMOS transistorGeneral purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.Features and benefitsAdvanced flange material for optimum thermal behavior and reliabilityExcellent ruggednessHigh power gainDesigned for b..
180.00€ 280.00€
-12 %
Brand: AMPLEON
Model: BLF573S
HF / VHF power LDMOS transistorA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.Features and benefitsEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilityDesi..
150.00€ 170.00€
-50 %
Brand: Advanced Semiconductor
Model: BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Collector- Emitter Voltage VCEO Max:32 VEmitter- Base Voltage VEBO:4 VContinuous Collector Current:4 AMinimum Operating Temperature:- 65 CMaximum Operat..
50.00€ 100.00€
-4 %
Brand: Advanced Semiconductor
Model: BLV57
Polarity: NPNOutput power: 12 WDissipated power (Ptot): 77 WCollector current (Ic max): 2 ACollector-emitter voltage (Vce max): 27 VSupply voltage: 25 VMounting or package: flangeFrequency bands: UHF..
45.00€ 47.00€
-38 %
Brand: Advanced Semiconductor
Model: BLW98
Frequency Min:470 MHzFrequency Max:860 MHzOutput Power:3.5 WGain:6.5 dBSupply Voltage:25 VId:850 mAPackage:StudProcess:BiPolar..
50.00€ 80.00€
-33 %
Brand: AMPLEON
Model: BLF647
UHF power LDMOS transistorSilicon N-channel enhancement mode lateral D-MOS 150W push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange.Features and benefitsHigh power gainEasy power controlExcellent ruggednessSource on underside eliminates D..
140.00€ 210.00€
-44 %
-27 %
Brand: NXP Semiconductors
Model: BLF872
RF Mosfet LDMOS 32V 900mA 300W LDMOSTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion IMD3 = −28 dBc
Typ..
160.00€ 220.00€
-10 %
Brand: MA-COM
Model: MRF141G
RF MOSFET N-CH 65V 32A 5-Pin Case 375-04Transistor Polarity:N-ChannelTechnology:SiId - Continuous Drain Current:32 AVds - Drain-Source Breakdown Voltage:65 VGain:12 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:375-04P..
270.00€ 300.00€