-33 %
Brand: ROHDE & SCHWARZ
Model: BN10913
Technical Features :Manufacturer / Brand: Rohde & Schwarz, PTE; MünchenCategory: Service- or Lab Equipment Power type and voltage: Alternating Current supply (AC) / 110-240 VoltLoudspeaker: - - No sound reproduction output.Material: Metal caseShape: Table model, low profile (big size).Dimensions..
100.00€ 150.00€
-39 %
Brand: AMPLEON
Model: BLF246,112
VDS drain-source voltage 65 VVGS gate-source voltage ±20 VID DC drain current 13 AHigh power gainLow noise figure
Easy power controlGood thermal stability
Withstands full load mismatch.Ptot total power dissipation 130 WTstg storage temperature+150 °CTj junction temperature 20..
110.00€ 180.00€
-36 %
Brand: NXP Semiconductors
Model: BLF369.112
Frequency Min:5 MHzFrequency Max:230 MHzOutput Power:500 WGain:19 dB% Typ Efficiency:55Supply Voltage:32 VId:2 mAPackage:SOT-800-2Process:LDMOS..
180.00€ 280.00€
-35 %
Brand: AMPLEON
Model: BLF573S,112
Typical CW performance at a frequency of 225 MHz, Supply voltage of 50 V and an
IDq of 900 mA:Average output power = 300 W Power gain = 27.2 dB
Efficiency = 70 %
Easy power control Integrated ESD protectionExcellent ruggedness
High efficiency
Excellent thermal stability
Designed fo..
110.00€ 170.00€
-50 %
Brand: Advanced Semiconductor
Model: BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Collector- Emitter Voltage VCEO Max:32 VEmitter- Base Voltage VEBO:4 VContinuous Collector Current:4 AMinimum Operating Temperature:- 65 CMaximum Operat..
50.00€ 100.00€
-53 %
Brand: Advanced Semiconductor
Model: BLV57
Polarity: NPNOutput power: 12 WDissipated power (Ptot): 77 WCollector current (Ic max): 2 ACollector-emitter voltage (Vce max): 27 VSupply voltage: 25 VMounting or package: flangeFrequency bands: UHF..
80.00€ 170.00€
-38 %
Brand: Advanced Semiconductor
Model: BLW98
Frequency Min:470 MHzFrequency Max:860 MHzOutput Power:3.5 WGain:6.5 dBSupply Voltage:25 VId:850 mAPackage:StudProcess:BiPolar..
50.00€ 80.00€
-33 %
Brand: AMPLEON
Model: BLF647PS,112
Designed for broadband operation (HF to 600 MHz)VDS drain-source voltage 135 VVGS gate-source voltage +11 VHigh efficiencyEasy power controlIntegrated ESD protectionExcellent ruggednessExcellent thermal stabilityCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (..
140.00€ 210.00€
-50 %
Brand: NXP Semiconductors
Model: BLY87C
Frequency Min:1 GHzFrequency Max:2 GHzOutput Power:8 WGain:12 dBSupply Voltage:13.5 VPackage:StudProcess:BiPolar..
40.00€ 80.00€
-28 %
Brand: Advanced Semiconductor
Model: BLF861A
RF Mosfet LDMOS (Dual), Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTProduct DetailsRF Mosfet LDMOS (Dual),Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTID 18 AVDS 65 VVGS ±15 VPDISS 318 W @ TC = 25 °CTJ -65 °C to +200 °CTSTG -65 °C to +150 °CθJC 0.55 °C/W..
180.00€ 250.00€
-44 %
-27 %
Brand: NXP Semiconductors
Model: BLF872,112
RF Mosfet LDMOS 32V 900mA 300W LDMOSTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion IMD3 = −28 dBc
Typ..
160.00€ 220.00€