Brand: AMPLEON
Model: BLF647PS,112
Designed for broadband operation (HF to 600 MHz)VDS drain-source voltage 135 VVGS gate-source voltage +11 VHigh efficiencyEasy power controlIntegrated ESD protectionExcellent ruggednessExcellent thermal stabilityCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (..
210.00€
Brand: Advanced Semiconductor
Model: BLF861A
RF Mosfet LDMOS (Dual), Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTProduct DetailsRF Mosfet LDMOS (Dual),Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTID 18 AVDS 65 VVGS ±15 VPDISS 318 W @ TC = 25 °CTJ -65 °C to +200 °CTSTG -65 °C to +150 °CθJC 0.55 °C/W..
250.00€
Brand: NXP Semiconductors
Model: BLF872,112
RF Mosfet LDMOS 32V 900mA 300W LDMOSTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion IMD3 = −28 dBc
Typ..
220.00€
Brand: NXP Semiconductors
Model: BLF878,112
LDMOS, RF, 300W, UHF, 89V, SOT-979A2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:Peak envelop power load power = 300 WPower gain = 21 dBDrain efficiency = 46 %Third-order intermodulation distortion = 35 dBcDVB performance at 858 MHz, a dr..
350.00€
Brand: AMPLEON
Model: BLF898
Designed for symmetric and asymmetric Doherty operationVDS drain-source voltage 120 VVGS gate-source voltage +11 VHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Rest..
400.00€
Brand: AMPLEON
Model: BLF898S
Designed for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)..
370.00€
Brand: NXP Semiconductors
Model: BLF202,115
MOSFET N-CH 40V 1A 8-Pin CDIP SMDVDS drain-source voltage 40 VVGS gate-source voltage ±20 VID drain current (DC) 1 AHigh power gainEasy power controlGold metallizationGood thermal stability
Withstands full load mismatchPtot total power dissipation 5.7 W
Tstg storage temperature150 ..
50.00€
Brand: NXP Semiconductors
Model: BLF6G21-10G
RF MOSFET N-CH 65V 3-Pin CDIP SMDW-CDMA performance at frequencies of 2110 MHz and 2170 MHz,Supply voltage of 28 V and an IDq of 100 mA:Efficiency = 31 %ACPR = 39 dBcEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stability No internal matching fo..
65.00€
Brand: AMPLEON
Model: BLF147,112
MOSFET N-CH 65V 25A 4-Pin SOT-121BVDS drain-source voltage 65V VGS gate-source voltage ±20 VID drain current (DC) 25 AHigh power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.Ptot total power dissipation 220 WTstg ..
185.00€