Brand: AMPLEON
Model: BLF573S,112
Technical FeaturesTrans MOSFET N-CH 110V 42A 3-Pin LDMOST BlisterTypical CW performance at a frequency of 225 MHz, Supply voltage of 50 V and an
IDq of 900 mA:Average output power = 300 W Power gain = 27.2 dB
Efficiency = 70 %
Easy power control Integrated ESD protectionExcellent rug..
200.00€
Brand: NXP Semiconductors
Model: BLF578,112
Technical FeaturesFrequency range : 10~500mhzNom output power : 1000WPower gain(VDS = 50 V; PL = 1000 W) : 26 dBDrain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W) : 75%Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilit..
520.00€
Brand: AMPLEON
Model: BLF647PS,112
Technical FeaturesTrans MOSFET N-CH 65V 5-Pin SOT-1121B BulkEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilityDesigned for broadband operation (HF to 600 MHz)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)..
330.00€
Brand: Advanced Semiconductor
Model: BLF861A
RF Mosfet LDMOS (Dual), Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTProduct DetailsRF Mosfet LDMOS (Dual),Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTID 18 AVDS 65 VVGS ±15 VPDISS 318 W @ TC = 25 °CTJ -65 °C to +200 °CTSTG -65 °C to +150 °CθJC 0.55 °C/W..
230.00€
Brand: NXP Semiconductors
Model: BLF872,112
Technical FeaturesRF Mosfet LDMOS 32V 900mA 300W LDMOSTTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortio..
300.00€
Brand: NXP Semiconductors
Model: BLF878,112
Technical FeaturesLDMOS, RF, 300W, UHF, 89V, SOT-979A2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:Peak envelop power load power = 300 WPower gain = 21 dBDrain efficiency = 46 %Third-order intermodulation distortion = 35 dBcDVB performan..
300.00€
Brand: AMPLEON
Model: BLF898U
Technical FuturesDesigned for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Ha..
390.00€
Brand: AMPLEON
Model: BLF898SU
Technical FuturesDesigned for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Ha..
450.00€
Brand: NXP Semiconductors
Model: BLF202,115
Technical FeaturesTrans MOSFET N-CH 40V 1A 8-Pin CDIP SMD T/RHigh power gainEasy power controlGold metallizationGood thermal stability
Withstands full load mismatchVDS drain-source voltage 40 V
VGS gate-source voltage ±20 V
ID drain current (DC) 1 A
Ptot total power dissipation..
50.00€
Brand: NXP Semiconductors
Model: BLF6G21-10G
Technical FeaturesTransistor RF MOSFET N-CH 65V 3-Pin CDIP SMD T/RW-CDMA performance at frequencies of 2110 MHz and 2170 MHz,Supply voltage of 28 V and an IDq of 100 mA:Efficiency = 31 %ACPR = 39 dBcEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabi..
50.00€
Brand: AMPLEON
Model: BLF147,112
Technical FeaturesTransistor MOSFET N-CH 65V 25A 4-Pin SOT-121B BulkHigh power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.VDS drain-source voltage 65V
VGS gate-source voltage ±20 V
ID drain current (DC) 25 A
Ptot tot..
150.00€