Technical FuturesDesigned for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Ha..
Technical FuturesDesigned for symmetric and asymmetric Doherty operationHigh efficiencyIntegrated dual sided ESD protectionExcellent ruggednessHigh power gainExcellent reliabilityEasy power controlCompliant to Directive 2002/95/EC, regarding Restriction of Ha..
Technical FeaturesTransistor MOSFET N-CH 65V 25A 4-Pin SOT-121B BulkHigh power gain
Low intermodulation distortion
Easy power control
Good thermal stability
Withstands full load mismatch.VDS drain-source voltage 65V
VGS gate-source voltage ±20 V
ID drain current (DC) 25 A
Ptot tot..