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Transistors

Brand: AMPLEON Model: BLP10H610AZ
Frequency Min:0.01 GHzFrequency Max:1.4 GHzOutput Power:10 WGain:22 dB% Typ Efficiency:60Supply Voltage:50 VId:60 mAPackage:SOT1352-1Process:LDMOS..
35.00€
Brand: NXP Semiconductors Model: BLF578,112
Technical FeaturesFrequency range : 10~500mhzNom output power : 1000WPower gain(VDS = 50 V; PL = 1000 W) : 26 dBDrain efficiency(VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1000 W) :  75%Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilit..
520.00€
Brand: AMPLEON Model: BLP05H6110XRY
Frequency Min:0.01 GHzFrequency Max:0.6 GHzOutput Power:110 WGain:27 dB% Typ Efficiency:75Supply Voltage:50 VPackage:SOT1223-2Process:LDMOS..
60.00€
Brand: Advanced Semiconductor Model: BLV32F
RF Bipolar Transistors RF Transistor 32 V 4 ATransistor Type:Bipolar PowerTechnology:SiTransistor Polarity:NPNDC Collector/Base Gain hFE Min:20Collector- Emitter Voltage VCEO Max:32 VEmitter- Base Voltage VEBO:4 VContinuous Collector Current:4 AMinimum Operating Temperature:- 65 CMaximum Operat..
120.00€
Brand: Advanced Semiconductor Model: BLV57
Polarity: NPNOutput power: 12 WDissipated power (Ptot): 77 WCollector current (Ic max): 2 ACollector-emitter voltage (Vce max): 27 VSupply voltage: 25 VMounting or package: flangeFrequency bands: UHF..
230.00€
Brand: AMPLEON Model: BLF647PS,112
Technical FeaturesTrans MOSFET N-CH 65V 5-Pin SOT-1121B BulkEasy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal stabilityDesigned for broadband operation (HF to 600 MHz)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)..
330.00€
Brand: NXP Semiconductors Model: BLY87C
Frequency Min:1 GHzFrequency Max:2 GHzOutput Power:8 WGain:12 dBSupply Voltage:13.5 VPackage:StudProcess:BiPolar..
65.00€
Brand: Advanced Semiconductor Model: BLF861A
RF Mosfet LDMOS (Dual), Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTProduct DetailsRF Mosfet LDMOS (Dual),Common Source 32V 1A 860MHz 14.5dB 150W LDMOSTID 18 AVDS 65 VVGS ±15 VPDISS 318 W @ TC = 25 °CTJ -65 °C to +200 °CTSTG -65 °C to +150 °CθJC 0.55 °C/W..
230.00€
Brand: STMicroelectronics Model: SD56120M
Trans RF MOSFET N-CH 65V 14A 5-Pin Case M-252 Tube..
220.00€
Brand: NXP Semiconductors Model: BLF872,112
Technical FeaturesRF Mosfet LDMOS 32V 900mA 300W LDMOSTTypical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:Peak envelope power load power PL(PEP) = 300 WGain Gp = 15 dBDrain efficiency ηD = 43 %Third-order intermodulation distortion..
300.00€
Brand: MA-COM Model: MRF141G
Trans RF MOSFET N-CH 65V 32A 5-Pin Case 375-04Transistor Polarity:N-ChannelTechnology:SiId - Continuous Drain Current:32 AVds - Drain-Source Breakdown Voltage:65 VGain:12 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:3..
445.00€
Brand: MA-COM Model: MRF171A
Trans RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07Technology:SiId - Continuous Drain Current:4.5 AVds - Drain-Source Breakdown Voltage:65 VGain:17 dBOutput Power:45 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:211-07-3Packaging:TrayConfigu..
85.00€
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