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Transistors

Brand: NXP Semiconductors Model: MRFX1K80HR5
Transistor RF - MRFX1K80HR5 - Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features Unmatched input and output allowing wide frequency range utilization The device can be used single-ended or in a push-pull configuration Qualified up to a maximum of 65 VDD operation Characterized from 30 to 65 V for the extended power range ..
450.00€
Brand: Freescale Semiconductor Model: MRFE6VP61K25H
- MRFE6VP61K25H - RF Power LDMOS TransistorsTypical Performance: VDD = 50 VoltsFrequency Min:0.0018 GHzFrequency Max:0.6 GHzOutput Power:1250 WGain:22.9 dB% Typ Efficiency:80Supply Voltage:50 VPackage:SOT1787Process:LDMOS..
500.00€
Brand: AMPLEON Model: BLF178XR,112
Transistor RF - BLF178XR,112 - Technical FeaturesTransistor MOSFET N-CH 110V A 5-Pin SOT-539A BulkAMPLEON LDMOS 1100W FM TransistorTypical pulsed performance at a frequency of 108 MHz,supply voltage of 50 V and an IDq of 40 mAOutput power = 1400 WPower gain = 28 dBEfficiency = 80 %Easy power controlIntegrated ESD protectionExcell..
350.00€
Brand: NXP Semiconductors Model: MRF1K50HR5
Transistor RF - MRF1K50HR5 - Wideband RF Power LDMOS Transistor,  1500 W CW, 50 VTechnology:SiId - Continuous Drain Current:2.4 AVds - Drain-Source Breakdown Voltage:- 500 mV, 135 VGain:23.7 dBOutput Power:1.5 kWMinimum Operating Temperature:- 40 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:NI-1..
650.00€
Brand: AMPLEON Model: BLF188XR
Transistor RF - BLF188XR - Technical Features:Trans MOSFET N-CH 135V 4-Pin SOT-539A BoxEasy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Subst..
225.00€
Brand: AMPLEON Model: BLF183XRU
Transistor RF - BLF183XRU - Technical FeaturesTransistor MOSFET N-CH 135V 5-Pin SOT-1121A BulkEasy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Su..
140.00€
Brand: STMicroelectronics Model: SD2932
150022 - SD2932 - Trans MOSFET N-CH 125V 40A 4-Pin (4+Tab) Case M-244 TubeTechnology:SiId - Continuous Drain Current:40 AVds - Drain-Source Breakdown Voltage:125 VGain:15 dBOutput Power:300 WMinimum Operating Temperature:- 65 CMaximum Operating Temperature:+ 150 CMounting Style:SMD/SMTPackage/Case:M244Packaging:TrayC..
150.00€
Brand: AMPLEON Model: BLF571,112
Transistor RF - BLF571,112 - Technical FeaturesAMPLEON LDMOS TransistorBLF571 Series 255 MHz 20 W 50 V HF/ VHF Power LDMOS Transistor - SOT-467CTypical CW performance at frequency of 225 MHz,Supply voltage of 50 V and an IDq of 50 mA:Average output power = 20 WPower gain = 27.5 dBEfficiency = 70 %Easy power controlIntegrated ES..
85.00€
Brand: AMPLEON Model: BLF574,112
- BLF574,112 - Technical Features600W FM LDMOS TransistörTypical CW performance at a frequency of 225 MHz,Supply voltage of 50 V and an IDq of 1000 mA:Average output power = 500 WPower gain = 26.5 dBEfficiency = 70 %Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal sta..
220.00€
Brand: AMPLEON Model: BLF881,112
Transistor RF - BLF881,112 - Technical FuturesTrans RF MOSFET N-CH 104V 3-Pin LDMOST Bulk2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 WPower gain = 21 dB Drain efficiency = 49 %Third order intermodulation distortion = 34 dBcD..
140.00€
Brand: AMPLEON Model: BLF244,112
Transistor RF - BLF244,112 - Technical FeaturesFrequency Min:     0.005 GHzFrequency Max0.175 GHzOutput Power:15 WGain:13 dB% Typ Efficiency:50Supply Voltage:28 VId:25 mAPackage:SOT-123AProcess:VDMOS..
140.00€
Brand: NXP Model: BLF245
Transistor RF - BLF245 - FM MOSFET TRANSISTORFM MOSFET TRANSISTORBRAND: ASIMAX. OUTPUT POWER: 30 WSUPPLY VOLTAGE: 28 V..
80.00€
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