Transistor RF - MRFX1K80HR5 - Ldmos Transistor, Rf, 193V, Ni-1230H-4S Features
Unmatched input and output allowing wide frequency range utilization
The device can be used single-ended or in a push-pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for the extended power range ..
Transistor RF - BLF178XR,112 - Technical FeaturesTransistor MOSFET N-CH 110V A 5-Pin SOT-539A BulkAMPLEON LDMOS 1100W FM TransistorTypical pulsed performance at a frequency of 108 MHz,supply voltage of 50 V and an IDq of 40 mAOutput power = 1400 WPower gain = 28 dBEfficiency = 80 %Easy power controlIntegrated ESD protectionExcell..
Transistor RF - BLF571,112 - Technical FeaturesAMPLEON LDMOS TransistorBLF571 Series 255 MHz 20 W 50 V HF/ VHF Power LDMOS Transistor - SOT-467CTypical CW performance at frequency of 225 MHz,Supply voltage of 50 V and an IDq of 50 mA:Average output power = 20 WPower gain = 27.5 dBEfficiency = 70 %Easy power controlIntegrated ES..
- BLF574,112 - Technical Features600W FM LDMOS TransistörTypical CW performance at a frequency of 225 MHz,Supply voltage of 50 V and an IDq of 1000 mA:Average output power = 500 WPower gain = 26.5 dBEfficiency = 70 %Easy power controlIntegrated ESD protectionExcellent ruggednessHigh efficiencyExcellent thermal sta..
Transistor RF - BLF881,112 - Technical FuturesTrans RF MOSFET N-CH 104V 3-Pin LDMOST Bulk2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
Peak envelope power load power = 140 WPower gain = 21 dB Drain efficiency = 49 %Third order intermodulation distortion = 34 dBcD..